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SEMICONDUCTOR
REGISTRATION PENDING Available as FRS244 (D, R, H)
November 1994
2N7288D, 2N7288R 2N7288H
Radiation Hardened N-Channel Power MOSFETs
Package
TO-257AA
Features
* 9A, 250V, RDS(on) = 0.415 * Second Generation Rad Hard MOSFET Results From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 7.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2 Typically Survives 1E5ions/cm2 Having an LET 35MeV/mg/cm2 and a Range 30m at 80% BVDSS
* Gamma Dot * Photo Current * Neutron * Single Event
Description
The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. Heavy ion survival from signal event drain burn-out exists for linear energy transfer (LET) of 35 at 80% of rated voltage. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S19500. Contact the Harris Semiconductor High-Reliability Marketing group for any desired deviations from the data sheet.
Symbol
Absolute Maximum Ratings
(TC = +25oC) Unless Otherwise Specified 2N7288D, R, H 250 250 9 6 27 20 75 30 0.60 27 9 27 -55 to +150 300 UNITS V V A A A V W W W/oC A A A oC
oC
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain-Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductive Current, Clamped, L = 100H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
(c) Harris Corporation 1992
File Number
3256.1
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Specifications 2N7288D, 2N7288R, 2N7288H - Registration Pending
Pre-Radiation Electrical Specifications
TC = +25oC, Unless Otherwise Specified LIMITS PARAMETER Drain-Source Breakdown Volts Gate-Threshold Volts Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero-Gate Voltage Drain Current SYMBOL BVDSS VGS(th) IGSSF IGSSR IDSS1 IDSS2 IDSS3 IAR VDS(on) RDS(on) td(on) tr td(off) tf QG(th) QG(on) QGM VGP QGS QGD VSD TT Rjc Rja Free Air Operation ID = 9A, VGD = 0 I = 9A; di/dt = 100A/s VDD = 125V, ID = 9A IGS1 = IGS2 0 VGS 20 TEST CONDITIONS VGS = 0, ID = 1mA VDS = VGS, ID = 1mA VGS = +20V VGS = -20V VDS = 250V, VGS = 0 VDS = 200V, VGS = 0 VDS = 200V, VGS = 0, TC = +125oC Time = 20s VGS = 10V, ID = 9A VGS = 10V, ID = 6A VDD = 125V, ID = 9A Pulse Width = 3s Period = 300s, Rg = 25 0 VGS 10 (See Test Circuit) MIN 250 2.0 2 29 55 2 4 12 0.6 MAX 4.0 100 100 1 0.025 0.25 27 3.92 0.415 46 100 ns Turn-Off Delay Time Fall Time Gate-Charge Threshold Gate-Charge On State Gate-Charge Total Plateau Voltage Gate-Charge Source Gate-Charge Drain Diode Forward Voltage Reverse Recovery Time Junction-To-Case Junction-To-Ambient 368 124 8 116 220 10 18 nc 48 1.8 840 1.67
oC/W
UNITS V V nA nA
mA
Rated Avalanche Current Drain-Source On-State Volts Drain-Source On Resistance Turn-On Delay Time Rise Time
A V
nc
V
V ns
60
VDD RL V1
E1 = 0.5 BVDSS
VC = 0.75 BVDSS L
VDS DUT E1 VC 0.06 IL
Rg
FIGURE 1. SWITCHING TIME TESTING
FIGURE 2. CLAMPED INDUCTIVE SWITCHING, ILM
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Specifications 2N7288D, 2N7288R, 2N7288H - Registration Pending
Post-Radiation Electrical Specifications
TC = +25oC, Unless Otherwise Specified LIMITS PARAMETER Drain-Source Breakdown Volts (Note 4, 6) (Note 5, 6) Gate-Source Threshold Volts (Note 4, 6) (Note 3, 5, 6) Gate-Body Leakage Forward (Note 4, 6) (Note 5, 6) Gate-Body Leakage Reverse (Note 2, 4, 6) (Note 2, 5, 6) Zero-Gate Voltage Drain Current (Note 4, 6) (Note 5, 6) Drain-Source On-State Volts (Note 1, 4, 6) (Note 1, 5, 6) Drain-Source On Resistance (Note 1, 4, 6) (Note 1, 5, 6) NOTES: 1. Pulse test, 300s max 2. Absolute value 3. Gamma = 300KRAD(Si) 4. Gamma = 10KRAD(Si) for "D", 100KRAD(Si) for "R". Neutron = 1E13 5. Gamma = 1000KRAD(Si). Neutron = 1E13 6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS 7. Gamma data taken 1/30/90 on TA17643 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA 19401 8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989 9. Neutron derivation, HARRIS Application note AN-8831, Oct. 1988 SYMBOL BVDSS BVDSS VGS(th) VGS(th) IGSSF IGSSF IGSSR IGSSR IDSS IDSS VDS(on) VDS(on) RDS(on) RDS(on) TYPE 2N7288D, R 2N7288H 2N7288D, R 2N7288H 2N7288D, R 2N7288H 2N7288D, R 2N7288H 2N7288D, R 2N7288H 2N7288D, R 2N7288H 2N7288D, R 2N7288H TEST CONDITIONS VGS = 0, ID = 1mA VGS = 0, ID = 1mA VGS = VDS, ID = 1mA VGS = VDS, ID = 1mA VGS = 20V, VDS = 0 VGS = 20V, VDS = 0 VGS = -20V, VDS = 0 VGS = -20V, VDS = 0 VGS = 0, VDS = 200V VGS = 0, VDS = 200V VGS = 10V, ID = 9A VGS = 16V, ID = 9A VGS = 10V, ID = 6A VGS = 14V, ID = 6A MIN 250 238 2.0 1.5 MAX 4.0 4.5 100 200 100 200 25 100 3.92 5.88 0.415 0.623 UNITS V V V V nA nA nA nA A A V V
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2N7288D, 2N7288R, 2N7288H - Registration Pending Typical Performance Characteristics
4
2N7288D, 2N7288R, 2N7288H - Registration Pending Packaging
A E Q H1 OP A1
TO-257AA
3 LEAD JEDEC TO-257AA HERMETIC METAL PACKAGE INCHES SYMBOL A MIN 0.190 0.035 0.025 0.060 0.645 0.410 MAX 0.200 0.045 0.035 0.090 0.665 0.420 MILLIMETERS MIN 4.83 0.89 0.64 1.53 16.39 10.42 MAX 5.08 1.14 0.88 2.28 16.89 10.66 NOTES 2, 3 4 4 4 -
D
A1 Ob Ob1 D
L1 0.065 R TYP.
E
Ob1
e e1
0.100 TYP 0.200 BSC 0.230 0.110 0.600 0.140 0.113 0.250 0.130 0.650 0.035 0.150 0.133
2.54 TYP 5.08 BSC 5.85 2.80 15.24 3.56 2.88 6.35 3.30 16.51 0.88 3.81 3.37
L b
H1 J1 L
1
2
3 J1
e e1
L1 OP Q
NOTES: 1. These dimensions are within allowable dimensions of Rev. B of JEDEC TO-257AA dated 9-88. 2. Add typically 0.002 inches (0.05mm) for solder coating. 3. Lead dimension (without solder). 4. Position of lead to be measured 0.150 inches (3.81mm) from bottom of dimension D. 5. Die to base BeO isolated, terminals to case ceramic isolated. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93.
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